Wolfspeed has unveiled its latest silicon carbide (SiC) 900V, 10mΩ MOSFET for EV drive trains. The MOSFET is rated for 196 A of continuous drain current at a case temperature of 25°C. According to the firm, this device enables the reduction of EV drive-train inverter losses by 78 percent based on EPA combined city/highway mileage standards. This efficiency improvement, the firm says, offers designers new options as it allows increased range and reduced battery usage.
This new device achieves a remarkable 10mΩ Rds(on) and is capable of 900V blocking voltage across the entire operating temperature range thereby greatly reducing derating requirements.
The firm recently supplied a full-SiC, 400A power module designed around the 900V, 10mΩ chip to Ford Motor Company in collaboration with the U.S. DoE. The module contains four MOSFETs connected in parallel to achieve a remarkable 2.5mΩ Rds(on).
Since then, Wolfspeed engineers have demonstrated that they can combine two such modules to create an 800A, 1.25mΩ module.
“With the commercial release of the 900V 10mΩ device, electric vehicles can now reap the benefits of SiC in all aspects of their power conversion,” said John Palmour, CTO of Wolfspeed. “With the continued expansion of our Gen3 MOSFET portfolio in new package options, our devices can now support significant efficiency improvements in onboard chargers, offboard chargers, and now EV drive trains.
Maximum operating temperature for the new chip is 175˚C, allowing it to offer high-reliability in harsh environments, like those found in vehicle drive-trains.
The MOSFET is available in bare die, and is currently available from SemiDice. An associated discrete device in a 4L-TO247 package is expected to be released in the coming weeks.