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EVs and HEVs Gear Up To Travel Further, Recharge Faster

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EVs and HEVs Gear Up To Travel Further, Recharge Faster

ST gears up for growing demand of automotive SiC (Silicon Carbide) devices with a complete set of devices for Hybrid and Electric Vehicles (EVs). These devices, the company says, are aimed at full conversion of auto power modules to silicon carbide (SiC) for greater vehicle range, convenience, and reliability.

The new rectifiers and MOSFETs are intended for all the vehicle’s main electrical blocks including the traction inverter, on-board battery charger, and auxiliary DC-DC converter, ST says.

ST’s new SiC devices will allow auto makers to create EVs and hybrids that travel further, recharge faster, and fit better into owners’ lives.

Compared to standard silicon diodes and IGBTs used in most of today’s power modules, the smaller SiC diodes and transistors present lower internal resistance and respond more quickly than standard silicon devices, which minimize energy losses and allow associated components to be smaller, saving even more size and weight.

In the EV/HEV main inverter, using the 650V SCTW100N65G2AG SiC MOSFET (typical frequencies up to 20kHz) increases the efficiency compared with an equivalent IGBT solution by up to 3%. This offers longer battery life, and a smaller and lighter power unit with lower cooling requirements. Additionally, the SiC MOSFET reduces power losses in the inverter (up to 80% lower at light/medium load), enabling designers to use higher switching frequencies for more compact designs, ST said.

In On-Board Charger and DC-DC Converters of EVs and HEVs, the new devices allow higher switching frequencies, thus reducing the size of passive components. Furthermore, the SiC MOSFET increases design flexibility as it can be used in diverse topologies, according to the Press release.

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ST is fabricating SiC MOSFETs and diodes on 4-inch wafers and plans to start SiC production on 6-inch wafers in order to reduce costs and improve quality. The company has an AEC-Q101 qualification for its new 650V SiC MOSFETs and 1200V SiC diodes planned to complete in early 2017. The qualification for the 1200V SiC MOSFETs will be completed by the end of 2017.

The STPSC20065WY 650V SiC diode is available in DO-247 while lower current ratings and smaller TO-220 package options are also available. Samples of the STPSC10H12D 1200V SiC diode are available in TO-220AC with volume production of the automotive-grade version planned for Q4 2016. Multiple current ratings from 6A to 20A and packaging options will also be available.. Further, the SCTW100N65G2AG 650V SiC MOSFET is sampling now in HiP247 package and its volume production will start in H1 2017.

For further details, view the full Press release.

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