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CMOS Power Switch For High-Speed Pulsed systems

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CMOS Power Switch For High-Speed Pulsed systems

RFMW announced a 40A Complementary MOSFET (CMOS) switch from XSYSTOR which offers easy integration to GaN amplifiers in high speed, pulsed power systems. The switches have clocked speeds of <200nSec for rise and fall times.

Allowing source and drain voltages from 28 to 80V, the XSYSTOR switch is compatible with standard and high voltage GaN amplifiers and transistors. The switches offer total switching times of <500 nsec when used together with 100 or 200 series controllers.

The current capacity of the 365CT000 is up to 40A average CW with good heat sinking. Operating temperature is specified for -40 to 85 degrees C but will withstand 175 degrees C with derated voltage and current capacity.

The 365CT000 is offered in a small, 23x27mm, castellated SMT package allowing it to be directly placed on or near the voltage supply line’s RF choke.

For more information, view the full Press release.

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