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High Efficiency GaN HEMTs For 4G Communications

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High Efficiency GaN HEMTs For 4G Communications

Mitsubishi Electric announced it would expand its lineup of Gallium Nitride High Electron Mobility Transistors (GaN-HEMTs) for use in Base Transceiver Stations (BTS) operating in the 3.5GHz band of fourth generation (4G) mobile communication systems.

The four new GaN-HEMTs offer output power and efficiency levels that are among the highest currently available. The devices are designed for use in macro BTS and large numbers of micro cells that mobile network operators are employing to increase the data capacity of their advanced 4G networks built with LTE and LTE-Advanced technologies.

As a result of the deployment of Long Term Evolution (LTE) and LTE-Advanced mobile networks, needs are rising for BTS that can offer increased data volume, smaller size and lower power consumption. Further, Mitsubishi Electric will continue to expand its GaN-HEMT lineup for use in different output power and frequencies, and in mobile communication systems beyond 4G.

Products include 180W and 90W models for macro-cell BTS, and 7W and 5W models for micro-cell BTS. The 90W model for macro-cell BTS achieves high drain efficiency (load pull) of 74 per cent while the 7W and 5W models for micro-cell BTS achieve high drain efficiency of 67 per cent. High efficiency allows use of simple cooling system, which contributes to smaller size and lower power consumption of BTS.

Samples will be released starting February 1.

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