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Power-Efficient GaN RF Power Transistors Available In 10 to 200W Ratings

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Power-Efficient GaN RF Power Transistors Available In 10 to 200W Ratings

Ampleon added new GaN RF power transistors based on 0.5um HEMT process technology to its existing portfolio of GaN RF power transistors. Comprising 10W, 30W, 50W and 100W devices, over ten transistors are currently available suitable for multiple applications such as drivers up to C band, through to 100W and 200W push-pull packages for use in final stages up to S band.

Housed in a compact and thermally stable ceramic package, the whole CLF1G family of devices are ideal for use in a broad range of applications that need to meet specific requirements of SWaP (size, weight and power). Typical applications include use in commercial aviation and radar applications, aerospace and defence systems and broadband solutions.

Devices available include the CLF1G0035S-50, a broadband 50W amplifier capable of operation from DC through to 3.5GHz that is designed for operation up to 50V and having excellent VSWR (ruggedness) capabilities of 10:1. Apart from this, 100W devices have just been released and Ampleon is currently sampling other types for mass production during early 2016.

“We are investing heavily in both LDMOS and GaN technology, as we see GaN gaining momentum beyond the A&D market, into areas such as cellular infrastructure. Indeed we see significant growth opportunities in both market segments, but with respect to GaN, the technology offers us the opportunity to broaden our product offering to our customers, and we will be releasing more in-depth news on the GaN front in the coming months”, said Senior Director of Marketing, Ampleon Multi Market Business Unit, Thijs Tullemans.

Ampleon’s GaN devices are optimised for best in class linearity, power efficiency, and broadband power performance. Electrical models, reference designs and demonstration boards are also available.

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