Toshiba Corporation has developed “TaRF8”, a next generation TarfSOI process optimized for radio-frequency (RF) switch applications. The company says that the RF switch ICs fabricated using the new TaRF8 process can achieve the lowest insertion loss in the industry, which will enhance the longer battery life for mobile devices
With the trend in mobile communications towards high-data-rate, high-capacity data transfers, RF switch ICs used in mobile devices, including smartphones, require multi-port support and improved RF performance. Lowering insertion loss is an important factor in this which can support a longer battery life for mobile devices as it decreases RF transmission power loss.
Toshiba is developing high-performance RF switch ICs utilizing its in-house fab to apply SOI-CMOS technology, which is suitable for integrating analog and digital circuits. SP12T, a transmit RF switch IC with an integrated MIPI-RFFE controller for mobile applications, is suited to the 3GPP GSM, UMTS, W-CDMA, LTE and LTE-Advanced standards.
According to the company, products utilizing TaRF8, the next generation process of Toshiba’s proprietary SOI-CMOS TarfSOI front-end process optimized for RF switches, achieve the lowest-class insertion loss in the industry, 0.32dB at 2.7GHz. Compared with products using Toshiba’s current TaRF6 process, insertion loss is improved by 0.1dB while maintaining the same level of distortion characteristics.
Sample shipments of SP12T RF switch ICs for smartphones fabricated with the new process will start in January 2016.