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Devices for Robust Switching In MOSFET

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Devices for Robust Switching In MOSFET

Devices with Unclamped Inductive Switching (UIS) are uniquely designed handle output short circuits or start-up phases under extreme condition. The launch of this new device from Alpha and Omega addresses wide range of applications that includes primary-side and secondary-side switching in telecom and industrial DC/DC converters, secondary-side synchronous rectification in DC/DC and AC/DC converters, as well as POL modules for telecom systems.

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The evolution of the power MOSFET has resulted in a very rugged transistor. The ruggedness of the device is nothing but the capability to withstand avalanche currents when subjected to UIS.  The UIS is measurement to investigate and compare the dynamic avalanche failure behaviour of the power MOSFETs, which occur at different current conditions. The UIS measurement results at different current conditions showing the main failure reason of the power MOSFETs, which is related to the parasitic bipolar transistor leading to the deterioration of the avalanche reliability of power MOSFETs.

Referring to the release, “The AON6590 is the lead product in what will be a new portfolio of 40V products that are optimised for switching power conversion. Compared to previous generations, this new product improves on-resistance by 30 per cent which reduces conduction losses and allows lower case temperatures during heavy load operation. AON6590 also offers low output capacitance, reducing turn-off energy loss, thus enabling higher efficiency in hard-switched applications.”

The AON6590 technical highlights as below

  • 40V N-channel MOSFET in a DFN5x6 package
  • RDS(ON) < 0.99 mOhms max at VGS = 10V
  • RDS(ON) < 1.5 mOhms max at VGS = 4.5V
  • COSS = 1438 pF typ
  • Qg (10V) = 100 nC typ
  • 100 per cent Rg and UIS tested

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